АКТИВНИ КОМПОНЕНТИ

Оптрон MOC3083

6-Pin DIP Zero-Cross Triac Driver Optocoupler

Features
• Simplifies Logic Control of 240 VAC Power
• Zero Voltage Crossing to Minimize Conducted and Radiated Line
Noise
• 800 V Peak Blocking Voltage
• Superior Static dv/dt
♦ 1500 V/s Typical, 600 V/s Guaranteed
• Safety and Regulatory Approvals
♦ UL1577, 4,170 VACRMS for 1 Minute
♦ DIN EN/IEC60747−5−5

Replacement for MOC3061;MOC3062;MOC3063;MOC3081;MOC3082

Транзистор IRFP9240

Транзистор IRFP240

Интегр.схема - оптрон TLP160J

Транзистор IRLB3036N

Транзистор TK100E10N1

Транзистор WMO11N65C2

Транзистор WMP11N65C2

Транзистор WMJ38N60C2

Диод BYC20 

Hyperfast power diode in a SOD113A (2-lead TO-220-F) plastic package

Транзистор IPA60R099C6

Транзистор RF6E045AJ

Marking Code: CJ

Транзистор RRL035P03

Marking Code: UF

Интегр.схема SN75175N

Интегр.схема - TOP244P  -  Integrated Off-Line Switcher

Корпус-        DIP 8

Интегр.схема - TOP224P  -  Integrated Off-Line Switcher

Корпус-        DIP 8

Транзистор STL210N4F7

N-channel 40 V, 1.3 mΩ typ., 120 A

Marking Code: 210N4

Интегр.схема - TOP262EN  -  Integrated Off-Line Switcher

Корпус-        eSIP-7C

Транзистор: NPN; биполярен; 380V; 6A; 35W; TO-220F

 

Транзистор: PNP; биполярен; 250V; 8A; 50W; TO-220 Complementary NPN Type: MJE15032G

Транзистор: NPN; биполярен; 250V; 8A; 50W; TO-220 Complementary PNP Type: MJE15033G

Транзистор: NPN; биполярен; 800V; 4A; 90W; TO-220

* HIGH VOLTAGE CAPABILITY
* VERY HIGH SWITCHING SPEED
* HIGH OPERATING JUNCTION TEMPERATURE
* HIGH RUGGEDNESS

Интегр.схема - оптрон PC922

Интегр.схема - Motor Driver Circuit TA6586

Диод : MUR460

Инт.схема -  OPA1612A

 

Интегр.схема VN820SP

Транзисторен комплект:

NPN - SAP16NY ;

биполярен NPN- ДАРЛИНГТОН; 160V; 15A; 150W;

Complementary PNP Type: SAP16PY

Интегр.схема U643B

Инт.схема -  JFET Input операционен усилвател

FEATURES

• Low Input Bias Current: 30pA

• Low Input Offset Current: 3pA

• High Input Impedance: 10¹²Ω

• Low Input Noise Current: 0.01 pA/√Hz

• High Common-Mode Rejection Ratio: 100 dB

• Large DC Voltage Gain: 106 dB

Ивт.схема - двоен операционен усилвател 1

FEATURES

• Equivalent Input Noise Voltage: 5 nV/√Hz Typ at 1 kHz

• Unity-Gain Bandwidth: 10 MHz Typ • Common-Mode Rejection Ratio: 100 dB Typ

• High DC Voltage Gain: 100 V/mV Typ

• Peak-to-Peak Output Voltage Swing 26 V Typ With V CC± = ±15 V and R

• High Slew Rate: 9 V/µs Typ L = 600 Ω

Инт.схема - операционен усилвател

FEATURES
• Small-signal bandwidth: 10MHz
• Output drive capability: 600Ω, 10V
• Input noise voltage:4nV Hz
• DC voltage gain: 100000
• AC voltage gain: 6000 at 10kHz
• Power bandwidth: 200kHz
• Slew rate: 13V/µs
• Large supply voltage range: ±3 to ±20VRMS at VS=±18V

Транзистор: N-MOSFET
Features
• 2V Maximum Low Threshold
• High Input Impedance
• 100 pF Typical Low Input Capacitance
• Fast Switching Speeds
• Low On-Resistance
• Free from Secondary Breakdown
• Low Input and Output Leakage

Транзистор: P-MOSFET

Features
• –2.4V Maximum Low Threshold
• High Input Impedance
• Low Input Capacitance (95 pF)
• Fast Switching Speeds
• Low On-Resistance
• Free from Secondary Breakdown
• Low Input and Output Leakage

Интегр.схема 4021

CMOS 8-Stage Static Shift RegisAsynchronous Parallel Input

or Synchronous Serial Input/Serial Outputters

 

Транзистор IRL3705N

Транзистор: PNP; биполярен; 120V; 3A; 3W; SOT223

* PNP Silicon AF Power Transistor
* For AF driver and output stages
* High collector current
* High current gain
* Low collector-emitter saturation voltage
* Complementary types: BDP955 (NPN)

Транзистор: NPN; биполярен; 120V; 3A; 3W; SOT223

Silicon AF Power Transistor
* For AF driver and output stages
* High collector current
* High current gain
* Low collector-emitter saturation voltage
*Complementary types: BDP956 (PNP)

Интегрална схема K561TM2 съдържаща два D-тригери

всеки от тях има

-  асинхронни входове за установяване и нулиране

-  два противофазни изходи

 

Транзистор: NPN; биполярен; 250V; 15A; 150W; TO-247 Complementary PNP Type: NJW0302G

Features
• Exceptional Safe Operating Area
• NPN/PNP Gain Matching within 10% from 50 mA to 3 A
• Excellent Gain Linearity
• High BVCEO
• High Frequency
• These Devices are Pb−Free and are RoHS Compliant
Benefits
• Reliable Performance at Higher Powers
• Symmetrical Characteristics in Complementary Configurations
• Accurate Reproduction of Input Signal
• Greater Dynamic Range
• High Amplifier Bandwidth

Транзистор: PNP; биполярен; 250V; 15A; 150W; TO-247 Complementary NPN Type: NJW0281G

Features
• Exceptional Safe Operating Area
• NPN/PNP Gain Matching within 10% from 50 mA to 3 A
• Excellent Gain Linearity
• High BVCEO
• High Frequency
• These Devices are Pb−Free and are RoHS Compliant
Benefits
• Reliable Performance at Higher Powers
• Symmetrical Characteristics in Complementary Configurations
• Accurate Reproduction of Input Signal
• Greater Dynamic Range
• High Amplifier Bandwidth

Транзистор: PNP; биполярен;

100V; 25A; 125W; TO-247

Features
■ Low collector-emitter saturation voltage
■ Complementary NPN - PNP transistors
Applications
■ General purpose
■ Audio amplifier

Complementary NPN Type: TIP35C

Транзистор TIP35C

Features

■ Low collector-emitter saturation voltage
■ Complementary NPN - PNP transistors
Applications
■ General purpose
■ Audio amplifier

Транзистор IKW50N65F5

Интегр.схема - превключвател на близост, датчик за дистанция

Транзистор BU941ZP

High voltage ignition coil driver NPN power Darlington transistor

Features
■ Very rugged bipolar technology
■ Built in clamping Zener
■ High operating junction temperature
■ Fully insulated package (U.L. compliant) for easy mounting
Applications
■ High ruggedness electronic ignitions

Интегр.схема AD561JN

Транзистор 2N3819

N-Channel RF Amplifier

Транзистор IRLB4030

HEXFET*Power MOSFET

Benefits
* Optimized for Logic Level Drive
* Very Low R DS(ON) at 4.5V V GS
* Superior R*Q at 4.5V V GS
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
* Fully Characterized Capacitance and Avalanche SOA
* Enhanced body diode dV/dt and dI/dt Capability
* Lead-Free

Транзистор IRLI540N

* Logic –Level Gate Drive
* Advanced Process Technology
* Isolated Package
* High Voltage Isolation = 2.5KVRMS 
* Sink to Lead Creepage Dist. = 4.8mm
* Fully Avalanche Rated
* Lead-Free