THT

Транзистор MJ11033G

Features
• High DC Current Gain − hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to +200C
 

Транзистор 2SB1203

Features:

• Low collector-to-emitter saturation voltage

• High current and high fT

• Excellent linearity of hFE

• Fast switching speed

Транзистор 2SA1013