THT Transistor N-Ch

Транзистор WML15N80M3

Транзистор IRFB3607

 

Транзистор SPW47N65C3

Features
• Worldwide best R ds,on in TO247
• Low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC 1) for target applications
• Pb-free lead plating; RoHS compliant

Транзистор  IRLU3110Z

Applications
* DC Motor Drive
* High Efficiency Synchronous Rectification in SMPS
* Uninterruptible Power Supply
* High Speed Power Switching
* Hard Switched and High Frequency Circuits

Транзистор IRCZ44

* Dynamic dv/dt Rating
* Current Sense
* 175°C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements

Транзистор  IRLU3636

Applications
* DC Motor Drive
* High Efficiency Synchronous Rectification in SMPS
* Uninterruptible Power Supply
* High Speed Power Switching
* Hard Switched and High Frequency Circuits

Транзистор IRFP4868

Транзистор IRLI2203N

Транзистор SPP20N65C3

Транзистор IRLU024N

Транзистор IRLB3034

Транзистор SPW47N65C3

Транзистор IRF3710

Транзистор IRFIZ48N

Транзистор IRF640

Транзистор IRFB4227

Транзистор IRLU8743

Транзистор IRFP240

Транзистор IRLB3036N

Транзистор TK100E10N1

Транзистор WMP11N65C2

Транзистор WMJ38N60C2

Транзистор IPA60R099C6

Транзистор: N-MOSFET
Features
• 2V Maximum Low Threshold
• High Input Impedance
• 100 pF Typical Low Input Capacitance
• Fast Switching Speeds
• Low On-Resistance
• Free from Secondary Breakdown
• Low Input and Output Leakage

Транзистор IRL3705N

Транзистор 2N3819

N-Channel RF Amplifier

Транзистор IRLB4030

HEXFET*Power MOSFET

Benefits
* Optimized for Logic Level Drive
* Very Low R DS(ON) at 4.5V V GS
* Superior R*Q at 4.5V V GS
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
* Fully Characterized Capacitance and Avalanche SOA
* Enhanced body diode dV/dt and dI/dt Capability
* Lead-Free

Транзистор IRLI540N

* Logic –Level Gate Drive
* Advanced Process Technology
* Isolated Package
* High Voltage Isolation = 2.5KVRMS 
* Sink to Lead Creepage Dist. = 4.8mm
* Fully Avalanche Rated
* Lead-Free

Транзистор IRFB4115

HEXFET*Power MOSFET

Benefits
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
* Fully Characterized Capacitance and Avalanche SOA
* Enhanced body diode dV/dt and dI/dt Capability
* Lead-Free

Транзистор MOSFET - полярност N ; 1000V; 15A; 360W; Корпус TO-247

Транзистор 2SK170

Low Noise Audio Amplifier Applications

· Recommended for first stages of EQ amplifiers and M.C. head amplifiers.
· Complimentary to 2SJ74