АКТИВНИ КОМПОНЕНТИ

Транзистор 2SJ74

Low Noise Audio Amplifier Applications

· Recommended for first stages of EQ amplifiers and M.C. head amplifiers.
· High |Y fs|: |Y fs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, I DSS = −3 mA)
· Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = −10 V, I D = −1 mA, f = 1 kHz)
· High input impedance: I GSS = 1.0 nA (max) (VGS = 25 V)
· Complimentary to 2SK170

Транзистор MOSFET - полярност N ; 1000V; 15A; 360W; Корпус TO-247

Двупосочен защитен диод

FEATURES
● AEC-Q101 qualified available
● Excellent clamping capability
● Low dynamic impedance
● 1500W surge capability at 10/1000μs waveform
● Fast response time: Typically less than 1.0ps from 0 volt to 5.0ns for bidirectional
● Typical IR less than 1μA above 10V
● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b)
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21

Изправителен диод

Транзистор 2SK170

Low Noise Audio Amplifier Applications

· Recommended for first stages of EQ amplifiers and M.C. head amplifiers.
· Complimentary to 2SJ74