International Rectifier

Транзистор IRL2505

Ключови предимства:

• Logic-Level Control: Пълно отваряне при ниско напрежение на гейта , което го прави перфектен за работа с Arduino, ESP32, STM32, Raspberry Pi и др.

• Ултра ниско съпротивление : Гарантира минимални топлинни загуби и висок коефициент на полезна действие (КПД).

• Огромен ток: Способен да комутира постоянни товари до 104 A (ограничен от корпуса) и импулсни товари до 360 A.

• Бързо превключване: Оптимизирана структура за бързо преходно време, подходяща за PWM (ШИМ) управление.

Транзистор IRF7413Z

Marking Code: F7413Z

Транзистор IRF4905

Транзистор  IRF7316

Dual P-channel MOSFET

Транзистор  IRF7319

Dual N-channel and P-channel MOSFET

Транзистор IRFB3607

Транзистор  IRLU3110Z

Applications
* DC Motor Drive
* High Efficiency Synchronous Rectification in SMPS
* Uninterruptible Power Supply
* High Speed Power Switching
* Hard Switched and High Frequency Circuits

Транзистор IRCZ44

* Dynamic dv/dt Rating
* Current Sense
* 175°C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements

Транзистор  IRLL024N

Applications
* DC Motor Drive
* High Efficiency Synchronous Rectification in SMPS
* Uninterruptible Power Supply
* High Speed Power Switching
* Hard Switched and High Frequency Circuits

Транзистор  IRLU3636

Applications
* DC Motor Drive
* High Efficiency Synchronous Rectification in SMPS
* Uninterruptible Power Supply
* High Speed Power Switching
* Hard Switched and High Frequency Circuits

Транзистор IRFR5305

Транзистор IRFP4868

Транзистор IRLI2203N

Транзистор IRLU024N

Транзистор IRLB3034

Транзистор IRF5210

Транзистор IRF3710

Транзистор IRFIZ48N

Транзистор IRF640

Транзистор IRLU8743

Транзистор IRLB3036N

Транзистор IRL3705N

Транзистор IRLB4030

HEXFET*Power MOSFET

Benefits
* Optimized for Logic Level Drive
* Very Low R DS(ON) at 4.5V V GS
* Superior R*Q at 4.5V V GS
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
* Fully Characterized Capacitance and Avalanche SOA
* Enhanced body diode dV/dt and dI/dt Capability
* Lead-Free

Транзистор IRLI540N

* Logic –Level Gate Drive
* Advanced Process Technology
* Isolated Package
* High Voltage Isolation = 2.5KVRMS 
* Sink to Lead Creepage Dist. = 4.8mm
* Fully Avalanche Rated
* Lead-Free

Транзистор IRFB4115

HEXFET*Power MOSFET

Benefits
* Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
* Fully Characterized Capacitance and Avalanche SOA
* Enhanced body diode dV/dt and dI/dt Capability
* Lead-Free