Транзистори

Транзистор    IGW75N60T

Транзистор IKW40N120T

Транзистор 2SB772

Features
■ High current
■ Low saturation voltage
■ Complementary to NPN type 2SD882

Транзистор 2SD882

Features
■ High current
■ Low saturation voltage
■ Complementary to PNP type 2SB772

Транзистор    STGW60V60DF

Транзистор IRF7413Z

Marking Code: F7413Z

Транзистор 2SB1098

Complement to type  2SD1589

Транзистор 2SD1589

Complement to type 2SB1098

Транзистор: NPN; биполярен; 230V; 15A; 150W; TO-264 Complementary PNP Type: 2SA1943

Power Amplifier Applications
 

Транзистор  DMN6040SSD

Dual N-channel MOSFET

Features:

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed

Marking Code  N6040SD

Транзистор  DMP6050SSD

Dual P-channel MOSFET

Features:

* Low On-Resistance
* Low Input Capacitance
* Fast Switching Speed

Marking Code  P6050SD

Транзистор IRF4905

Транзистор BUL38D

High voltage fast-switching NPN power transistor

Features
■ High voltage capability
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
■ High ruggedness
■ Fully characterized at 125 °C
■ Integrated antiparallel collector-emitter dio

Транзистор 2SC1815

Features
• High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max)
• Excellent h FE linearity: h FE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA
: h FE (IC = 0.1 mA)/h FE (IC = 2 mA) = 0.95 (typ.)
• Low noise: NF = 1dB (typ.) at f = 1 kHz
• Complementary to 2SA1015 (O, Y, GR class)

Транзистор  IRF7316

Dual P-channel MOSFET

Транзистор  IRF7319

Dual N-channel and P-channel MOSFET

Транзистор P-channel AO3401A

Marking Code: X1 

Мин. количество за поръчка 10 бр. или кратно на това.

Обявената цена е за 10 бр.

Транзистор N-channel AO3400A

Marking Code: X0  или  A0

Мин. количество за поръчка 10 бр. или кратно на това.

Обявената цена е за 10 бр.

Транзистор WML15N80M3

Транзистор IRFB3607

Транзистор 2SA1015

Features
•
• Complimentary to 2SC1815
•

Транзистор SS8850

Features
• 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8050
• Collector Current: I C = 1.5 A

Транзистор SS8050

Features
• 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation.
• Complimentary to SS8550
• Collector Current: I C = 1.5 A

Транзистор AO4884

Dual N-Channel MOSFET

Транзистор AO4447A

Транзистор SPW47N65C3

Features
• Worldwide best R ds,on in TO247
• Low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC 1) for target applications
• Pb-free lead plating; RoHS compliant

Транзистор BC550C

APPLICATION:

For switching and AF amplifier application

Транзистор BC560C

APPLICATION:

For switching and AF amplifier application

Транзистор BC556B

APPLICATION:

For switching and AF amplifier application

Транзистор BC546B

APPLICATION:

For switching and AF amplifier application

Транзистор BC337-40

General Purpose Transistors

Best Suited for use in

Driver and Output Stages of Audio Amplifier

Транзистор BC327-40

General Purpose Transistors

Best Suited for use in

Driver and Output Stages of Audio Amplifier

Транзистор    IGW50N60TP

Транзистор    IGW25N120H3

Транзистор  IRLU3110Z

Applications
* DC Motor Drive
* High Efficiency Synchronous Rectification in SMPS
* Uninterruptible Power Supply
* High Speed Power Switching
* Hard Switched and High Frequency Circuits

Транзистор 2SB647

Транзистор 2SD667

Транзистор IRCZ44

* Dynamic dv/dt Rating
* Current Sense
* 175°C Operating Temperature
* Fast Switching
* Ease of Paralleling
* Simple Drive Requirements

Транзистор  IRLL024N

Applications
* DC Motor Drive
* High Efficiency Synchronous Rectification in SMPS
* Uninterruptible Power Supply
* High Speed Power Switching
* Hard Switched and High Frequency Circuits

Транзистор  IRLU3636

Applications
* DC Motor Drive
* High Efficiency Synchronous Rectification in SMPS
* Uninterruptible Power Supply
* High Speed Power Switching
* Hard Switched and High Frequency Circuits

Транзистор MJ11033G

Features
• High DC Current Gain − hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to +200C
 

Транзистор 2SB1203

Features:

• Low collector-to-emitter saturation voltage

• High current and high fT

• Excellent linearity of hFE

• Fast switching speed

Транзистор 2SD1803

Features:

• Low collector-to-emitter saturation voltage

• High current and high fT

• Excellent linearity of hFE

• Fast switching speed
 

Транзистор AOD609

Complementary Enhancement Mode Field Effect Transistor

Транзистор IRFR5305

Транзистор STN9260

Marking  - N9260

High voltage fast-switching PNP power transistor

Features

■ High voltage capability

■ Fast switching speed

Транзистор 2SD669A